suzhou goodark electronics co., ltd version 1.0 gd ssf 23 00 b package marking and ordering information device marking device device package reel size tape width quantity 23 00 b ssf 23 00 b sot 23 - 3 ? 180mm 8 mm 3000 units absolute maximum rat i ngs(ta=25 unless otherwise noted) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v g s 10 v drain current - continuous@ current - pulsed (note 1) i d 4.5 a i dm 1 6 a maximum power dissipation p d 1.2 w operating junction and storage te mperature range t j ,t stg - 55 to 150 thermal characteristics thermal resistance,junction - to - ambient (note 2) r ja 1 40 / w general features v ds = 20v,i d = 4.5 a r ds(on) < 11 5 m @ v gs =2.5v r ds(on) < 6 0 m @ v gs =4.5v high power and current handing capabil ity lead free product is acquired surface mount package description the ssf 23 00 b uses advanced trench technology to provide excellent r ds(on) , low gate charge and operation with gate voltages as low as 2.5v. this device is suitable for use as a battery protection or in other switching application. application battery protection load switch power management schematic diagram marking and pin assignment sot23 - 3 top view d g s
suzhou goodark electronics co., ltd version 1.0 gd ssf 23 00 b electrical characteristics (ta=25 unless otherwise noted) parameter symbol condition min typ max unit off characteristics drain - source breakdown voltage bv dss v gs =0v i d = 250 a 20 v zero gate voltage drain current i dss v ds = 20 v,v gs =0v 1 a gate - body leakage current i gss v gs = 10 v,v ds =0v 100 na on characteristics (note 3) gate threshold voltage v gs(th) v ds =v gs ,i d = 2 50a 0. 65 0. 95 1. 2 v drain - source on - state resistance r ds(on) v gs = 2 .5v, i d = 3.1 a 70 115 m v gs = 4.5 v, i d = 3.6 a 45 60 m forward transconductance g fs v ds = 10 v,i d = 4.5 a 8 s dynamic characteristics (note4) input capacitance c lss v ds = 10 v,v gs =0v, f=1.0mhz 5 00 pf output capacitance c oss 250 pf reverse transfer capacitance c rss 9 0 pf switching characteristics (note 4) turn - on delay time t d(on) v dd =10v, r l = 2.8 ? v gs =4.5v,r gen =6 , i d = 3.6 a, 7 ns turn - on rise time t r 55 ns turn - off delay time t d(off) 16 ns turn - off fall time t f 10 ns total gate charge q g v ds =10v,i d = 4.2 a,v gs =4.5v 10 nc gate - source charge q gs 2.3 nc gate - drain charge q gd 2.9 nc drain - source diode characteristics diode forward voltage (note 3) v sd v g s =0v,i s = 1.3 a 1.2 v notes: 1. repetitive rating: pulse width limited by maximum junction temperature. 2. surface mounted on fr4 board, t 10 sec. 3. pulse test: pulse width 300s, duty cycle 2%. 4. guaranteed by design, not subject to production testing.
suzhou goodark electronics co., ltd version 1.0 gd ssf 23 00 b typical electrical and thermal characteristics square wave pluse d uration(sec) figure 3: normalized maximum transient thermal impedance v g s r g e n v i n g v d d r l v o u t s d figure 1: switching test circuit v i n v o u t 1 0 % 1 0 % 5 0 % 5 0 % p u l s e w i d t h i n v e r t e d t d ( o n ) 9 0 % t r t o n 9 0 % 1 0 % t o f f t d ( o f f ) t f 9 0 % v i n v o u t 1 0 % 1 0 % 5 0 % 5 0 % p u l s e w i d t h i n v e r t e d t d ( o n ) 9 0 % 9 0 % t r t o n 9 0 % 1 0 % t o f f t d ( o f f ) t f 9 0 % figure 2:switching waveforms normalized effective transient thermal impedance
suzhou goodark electronics co., ltd version 1.0 gd ssf 23 00 b sot23 - 3 package information notes 1 . tolerance 0.10mm (4 mil) unless otherwise specified 2 . package body sizes exclude mold flash an d gate burrs. mold flash at the non - lead sides should be less than 5 mils. 3 . dimension l is measured in gauge plane. 4 . controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
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